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Showcases research on GAA NW, quantum-well FinFETs.
June 18, 2015
By: DAVID SAVASTANO
Editor, Ink World Magazine
At VLSI 2015 Symposium in Kyoto, Japan, imec reported new results on nanowire FETs and quantum-well FinFETs towards post-FinFET multi-gate device solutions. As the major portion of the industry adopts FinFETs as the workhorse transistor for 16nm and 14nm, researchers worldwide are looking into the limits of FinFETs and potential device solutions for the 7nm node and beyond. Two approaches, namely Gate-All-Around Nanowire (GAA NW) FETs, which offer significantly better short-channel electrosta...
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